Semiconductor device and method of manufacturing the same

ABSTRACT

Any of a plurality of contact plugs which reaches a diffusion layer serving as a drain layer of an MOS transistor has an end provided in contact with a lower surface of a thin insulating film provided selectively on an interlayer insulating film. A phase change film constituted by GST to be a chalcogenide compound based phase change material is provided on the thin insulating film, and an upper electrode is provided thereon. Any of the plurality of contact plugs which reaches the diffusion layer serving as a source layer has an end connected directly to an end of a contact plug penetrating an interlayer insulating film.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and a method ofmanufacturing the semiconductor device, and more particularly to a phasechange memory for nonvolatily storing information with a change in aresistance value which is caused by a phase change.

2. Description of the Background Art

A phase change memory carries a current (an amorphous current) forcausing an amorphousness over a memory cell constituted by a phasechange material to melt the phase change material through resistanceheating, then performs cooling to bring an amorphous state, and carriesa current (a crystallizing current) for causing a crystallization overthe phase change material to anneal the phase change material throughthe resistance heating, thereby bringing a crystalline state.

Binary information can be selectively written to a memory cell in twostates of the phase change material. A state which is once subject to aphase change is not changed at an ordinary temperature. Therefore, it ispossible to hold the information nonvolatily.

The phase change memory is a nonvolatile memory which can also beapplied to both a memory embedded logic chip and a memory stand-alonechip and has been developed in a strategic location as a memory whichsucceeds to an existing NOR type flash memory and MONOS (Metal OxideNitride Oxide Semiconductor) memory. The MONOS is also referred to asSONOS (Silicon Oxide Nitride Oxide Semiconductor).

The research and development of the phase change memory for carrying outstorage and read by conducting the phase change material has alreadybeen started in approximately 1970. A decline was caused for a certainperiod of time. However, a novel developed phase change material(GeSbTe) was successfully applied to an optical disk so that an activitywas taken again. As a trigger for recovering an opportunity, a 4 Mbitphase change memory was published by Intel Co., Ltd. in 2002. Afterthat, a large number of semiconductor manufacturers entered thedevelopment.

There have been invented a cross point type having no access device toan element, a type using a diode as an access device, a type using anMOSFET (Metal-Oxide-Semiconductor Field-Effect-Transistor) as an accessdevice or a type using a bipolar transistor in a case in which a phasechange element is arranged as a memory array.

An example of a phase change memory using the MOSFET as an access devicehas been described in Y. N. Hwang et. al., “Writing Current Reductionfor High-density Phase-change RAM” International Electron DevicesMeeting 2003, pp. 893-896 (non-patent document 1).

For a phase change film, a chalcogenide semiconductor film such asGeSbTe (GST) is usually used. An ordinary semiconductor material andprocess can be applied to the MOSFET serving as the access device and aprocess for forming and processing, a device isolating film, a wiringlayer and an interlayer insulating film.

By taking, as an example, a non-patent document 1, description will begiven to the related art.

First of all, FIG. 20 shows a sectional structure of a non-patentdocument 1.

As shown in FIG. 20, an MOS transistor Q1 for access is provided on asilicon substrate 1 and an interlayer insulating film IL1 is provided tocover the MOS transistor Q1. A plurality of contact plugs CP1 topenetrate the interlayer insulating film IL1 is provided to reach aplurality of diffusion layers 3 disposed in a surface of the siliconsubstrate 1. A silicide layer SS is provided on the diffusion layer 3and each contact plug CP1 is actually provided in contact with thesilicide layer SS. For convenience, however, an expression of “reach thediffusion layer 3” is used.

The MOS transistor Q1 includes a gate insulating film 4 providedselectively on an active region defined by an isolation insulating film2, a gate electrode 5 provided on the gate insulating film 4, and thediffusion layer 3 which is provided selectively in the surface of thesilicon substrate 1 on the outside of both side surfaces in a directionof a gate length of the gate electrode 5 and serves as a source-drainlayer. The gate electrode 5 is extended in a depth direction withrespect to the drawing and serves as a word line and is covered with thesilicide layer SS. The side surfaces of the gate insulating film 4 andthe gate electrode 5 are covered with a sidewall insulating film, whichis not shown.

Any of the plurality of contact plugs CP1 which reaches the diffusionlayer 3 to be a source layer of the MOS transistor Q1 has an endconnected to a source line SL (extended in the depth direction withrespect to the drawing) having an end provided on the interlayerinsulating film IL1, and the other contact plugs CP1 are connected to aconnecting pad PD having an end disposed on the interlayer insulatingfilm IL1. The source line SL and the connecting pad PD are constitutedby a first metal wiring (M1).

The source line SL and the connecting pad PD are provided in aninterlayer insulating film IL2 disposed on the interlayer insulatingfilm IL1, and an interlayer insulating film IL3 is provided on theinterlayer insulating film IL2. A contact plug CP0 is provided to reachthe connecting pad PD penetrating the interlayer insulating film IL3,and an end of the contact plug CP0 is directly connected to a lower mainsurface of a phase change film 20 provided on the interlayer insulatingfilm IL3.

The phase change film 20 is constituted by GST to be a chalcogenidecompound based phase change material, an upper electrode 21 is providedon the phase change film 20, and the phase change film 20 and the upperelectrode 21 will be referred to as a phase change element PE together.

An interlayer insulating film IL4 is provided on the interlayerinsulating film IL3 to cover the phase change film 20 and the upperelectrode 21, and a contact plug CP2 is disposed to reach the upperelectrode 21 through the interlayer insulating film IL4. The contactplug CP2 has an end connected to a bit line BL provided on theinterlayer insulating film IL4. The bit line BL is constituted by asecond metal wiring.

With the structure described above, a region surrounded in a broken linein the drawing, that is, a region including a single MOS transistor Q1and a phase change element PE conducted by turning ON the MOS transistorQ1 constitutes a memory cell MC corresponding to one bit. Two memorycells MCs which are close to each other are constituted to share asingle source line and the contact plug CP0 linked thereto.

In a case in which the structure of the memory cell MC shown in FIG. 20is employed, a distance corresponding to two interlayer insulating filmsis formed between a first metal wiring (M1) formed in the interlayerinsulating film IL2 and a second metal wiring (M2) formed on theinterlayer insulating film IL4 in a peripheral circuit region. Thereason is that the structure is set to be common to the structure of amemory cell region, resulting in a simplification of a manufacturingprocess.

More specifically, in the memory cell MC, it is necessary to laminatethe interlayer insulating films IL3 and IL4 in order to form athree-stage connecting structure including the contact plug CP0, thephase change element PE and the contact plug CP2 between the connectingpad PD and the second metal wiring M2. Therefore, the peripheral circuitregion is also adapted thereto.

As a result, in the peripheral circuit region, a depth of the contactplug (CP2) is increased and a thickness of the interlayer insulatingfilm between the first metal wiring (M1) and the second metal wiring(M2) is increased so that a line capacity is decreased. In particular,this is a serious problem in a embedded chip. More detailed descriptionwill be given.

In a memory embedded logic chip (an embedded chip) in which a phasechange memory and a logic circuit are provided, a design of the logiccircuit (peripheral circuit) is changed corresponding to the structureof a memory cell in order to simplify the manufacturing process. Thecircuit is usually designed through a computer simulation using a modelset obtained by mathematically modeling an MOS transistorcharacteristic, a wiring resistance and a parasitic capacity. Asdescribed above, in the case in which the line capacity is differentfrom that in an existing model set as a result of the adaptation to thestructure of the memory cell, it is necessary to modify the model setand to design the circuit again. In a embedded chip in which variousproducts are assumed to be applying destinations, particularly, a costis increased in respect of a business profit, which is a seriousproblem.

The problem is caused by disposing the phase change element between thewiring layers. In order to solve the problem, it can be proposed todispose the phase change element below a lowermost layer wiring.

As an example of the structure in which the phase change element isdisposed below the lowermost layer wiring, the structures disclosed inJapanese Patent Application Laid-Open No. 2006-287222 (patentdocument 1) and 2006-294970 (patent document 2) are taken.

In patent document 1 and patent document 2, a decrease in the linecapacity is not recognized as a problem to be solved. However, FIG. 1 inpatent document 1 and FIG. 13 in patent document 2 have disclosed astructure in which the phase change element is provided below thelowermost layer wiring. It can be supposed that a drawback of thedecrease in the line capacity is not caused by the employment of thestructure.

In a case in which the phase change element is provided below thelowermost layer wiring, the phase change element has such a structurethat the lowermost layer wiring is interposed between the lowerinterlayer insulating film and the upper interlayer insulating filmwhich are obtained by dividing the lowermost layer wiring into two upperand lower layers. The lowermost layer wiring is formed on the upperinterlayer insulating film and is connected to the upper surface of thephase change element through the contact plug formed in the upperinsulating film. Moreover, the lower surface of the phase change elementis connected to the diffusion layer formed in the silicon substratethrough the contact plug formed in the lower insulating film.

On the other hand, in the peripheral circuit region, the lowermost layerwiring is connected to the diffusion layer formed in the siliconsubstrate through the contact plug penetrating the lower interlayerinsulating film and the upper interlayer insulating film.

However, the employment of the structure causes some new problems whichwill be described below.

More specifically, as a first problem, the contact plug for connectingthe lowermost layer wiring to the semiconductor substrate is excessivelydeep as discussed in patent document 2. In this case, there are requireda process technique and a process device which correspond to a highaspect ratio. A cost is increased and thereby the business profit isdamaged.

In FIG. 12 showing patent document 2, there is disclosed a structure inwhich the lowermost layer wiring and the phase change element are formedin the “same layer”, that is, on the same level. Instead, a degree ofdifficulty of the process is raised and the number of process steps isincreased.

As a second problem, the contact plug (the lower plug) for connectingthe lower surface of the phase change element to the semiconductorsubstrate is deepened and it is hard to reduce a diameter. Morespecifically, there is generally employed a method of setting thediameter of the lower plug such as the contact plug CP0 in FIG. 20 to besmaller than a standard hole diameter of the contact plug (a diameter ofapproximately several tens nm), thereby increasing a current density inorder to reduce an operating current in the phase change memory. Forthis purpose, it is desirable that the depth of the plug should be smallin respect of the characteristic of dry etching.

In the memory cell MC shown in FIG. 20, the depth of the contact plugCP0 is determined by only the thickness of the interlayer insulatingfilm IL2 for insulating the phase change element PE from the first metalwiring provided thereunder. By setting a process for forming theinterlayer insulating film IL2 and the CMP process as a special processto strictly increase precision, therefore, it is possible to form theinterlayer insulating film IL2 thinly, thereby reducing the depth of thecontact plug CP0 to some degree.

In a case in which the phase change element is disposed below the firstmetal wiring, however, the interlayer insulating film providedthereunder is to be thicker than at least the height of the gateelectrode (word line) in order to cover the MOS transistor. The depth ofthe contact plug is greater than that of the contact plug CP0 shown inFIG. 20.

As described above, in the conventional memory embedded logic chip inwhich the phase change memory and the logic circuit are provided, thereis a request for disposing the phase change element below the lowermostlayer wiring in order to prevent the thickness of the interlayerinsulating film between the first metal wiring and the second metalwiring from being increased, resulting in a decrease in the linecapacity. In that case, however, the contact plug for connecting thelowermost layer wiring to the semiconductor substrate is excessivelydeepened so that there are required a process technique and a processdevice which correspond to a high aspect ratio, resulting in an increasein a cost. Moreover, there is a problem in that the depth of the contactplug for connecting the lower surface of the phase change element to thesemiconductor substrate cannot be set to be smaller than the height ofthe gate electrode (the word line) and it is hard to reduce the diameterof the contact plug, resulting in an increase in an operating current.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a structure in whicha cost is not increased and an increase in an operating current is alsoprevented also in a structure in which a phase change element isprovided below a lowermost layer wiring in a memory embedded logic chipin which a phase change memory and a logic circuit are provided.

An aspect of the present invention is directed to a semiconductor devicein which any of a plurality of first layer contact plugs which reaches adiffusion layer serving as a drain layer of an MOS transistor isprovided in contact with a lower surface of a thin insulating filmhaving an end disposed selectively on a first interlayer insulatingfilm. A phase change film constituted by GST to be a chalcogenidecompound based phase change material is provided on the thin insulatingfilm and an upper electrode is provided thereon to constitute a phasechange element. Moreover, any of the plurality of first layer contactplugs which reaches a diffusion layer serving as a source layer has anend connected directly to an end of a second layer contact plugpenetrating the second interlayer insulating film, and the other end ofthe contact plug is connected to a source line provided on a secondinterlayer insulating film.

According to the semiconductor device, a memory cell structure of anRUML (Resistor Under Metal-Line) type is employed so that a decrease ina line capacity caused by the thickness increase of an interlayerinsulating film between a first metal wiring and a second metal wiringis prevented. Moreover, the source line and the diffusion layer areconnected through a stacked plug constituted by the first layer contactplug and the second layer contact plug. Also in a case in which adistance between the first metal wiring and a silicon substrate isincreased, therefore, an aspect ratio of an individual plug is notincreased. Therefore, there are not required a process technique and aprocess device which correspond to a high aspect ratio, and an increasein a cost can also be suppressed.

These and other objects, features, aspects and advantages of the presentinvention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view showing a structure of a semiconductor deviceaccording to an embodiment of the present invention;

FIG. 2 is a sectional view showing a structure of a comparison targetfor explaining effects produced by the semiconductor device according tothe embodiment of the present invention;

FIG. 3 is view for explaining effects of a double plug;

FIG. 4 is view for explaining the effects of the double plug;

FIG. 5 is a sectional view showing a structure of a variant 1 of thesemiconductor device according to the embodiment of the presentinvention;

FIG. 6 is a sectional view showing a structure of a variant 2 of thesemiconductor device according to the embodiment of the presentinvention;

FIGS. 7 to 19 are sectional views showing a manufacturing process of thevariant 2 of the semiconductor device according to the embodiment of thepresent invention;

FIG. 20 is a sectional view showing a structure of a conventionalsemiconductor device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment

<A. Structure of Device>

A structure of a semiconductor device 100 according to an embodiment ofthe present invention will be described with reference to FIG. 1. InFIG. 1, a memory cell region and a peripheral circuit region are shownside by side.

As shown in FIG. 1, an MOS transistor Q1 for access is provided on asilicon substrate 1 in a memory cell region and an interlayer insulatingfilm IL1 is provided to cover the MOS transistor Q1.

A plurality of contact plugs CP0 (first layer contact plugs) penetratingthe interlayer insulating film IL1 is provided to reach a plurality ofdiffusion layers 3 serving as source or drain layers of the MOStransistor Q1.

A silicide layer SS is provided on the diffusion layer 3 and each of thecontact plugs CP0 actually reaches the silicide layer SS. Forconvenience, an expression of “reach the diffusion layer 3” is used.

The MOS transistor Q1 includes a gate insulating film 4 providedselectively on an active region defined by an isolation insulating film2, a gate electrode 5 provided on the gate insulating film 4, and thediffusion layer 3 which is provided selectively in the surface of thesilicon substrate 1 on the outside of both side surfaces in a directionof a gate length of the gate electrode 5 and serves as a source or drainlayer. The gate electrode 5 is extended in a depth direction withrespect to the drawing and serves as a word line and is covered with thesilicide layer SS. The side surfaces of the gate insulating film 4 andthe gate electrode 5 are covered with a sidewall insulating film, whichis not shown.

A term of “MOS” has been used for a metal/oxide/semiconductor laminatingstructure since long ago and it is assumed that capital letters ofMetal-Oxide-Semiconductor are taken. In a field effect transistor havingthe MOS structure, however, materials of a gate insulating film and agate electrode are particularly improved in respect of an integrationand an enhancement in a manufacturing process in recent years, andpolycrystalline silicon is employed in place of a metal for the materialof the gate electrode. In respect of an improvement in an electricalcharacteristic, moreover, a material having a high dielectric constantis employed as the material of the gate insulating film. The material isnot always restricted to an oxide. Therefore, the term of “MOS” is notemployed with a restriction to only the “metal/oxide/semiconductor”laminating structure. Also in this specification, the restriction is notpremised. More specifically, in consideration of a common sense oftechnology, the “MOS” is an aberration originated in a derivation of aword and widely has a meaning including aconductor/insulator/semiconductor laminating structure.

Any (a first plug) of the plurality of contact plugs CP0 which reachesthe diffusion layer 3 serving as a drain layer of the MOS transistor Q1has an end provided in contact with a lower surface of a thin insulatingfilm 19 provided selectively on the interlayer insulating film IL1. Aphase change film 20 constituted by GST to be a chalcogenide compoundbased phase change material is provided on the thin insulating film 19,and an upper electrode 21 is provided thereon. The thin insulating film19, the phase change film 20 and the upper film 21 will be referred toas a phase change element PE1 together. An interlayer insulating filmIL2 is provided on the interlayer insulating film IL1 to cover the phasechange element PE1.

Moreover, any (a second plug) of the plurality of contact plugs CP0which reaches the diffusion layer 3 to be a source layer has an endconnected directly to any (a third plug) of the contact plugs CP1(second contact plugs) penetrating the interlayer insulating film IL2which reaches a source line SL (extended in the depth direction withrespect to the drawing) provided on the interlayer insulating film IL2.Moreover, an end of the contact plug CP1 (a fourth plug) penetrating theinterlayer insulating film IL2 is connected to a connecting pad PDprovided on the interlayer insulating film IL2 to reach the upperelectrode 21 of the phase change element PE1. The source line SL and theconnecting pad PD are constituted by a first metal wiring.

The source line SL and the connecting pad PD are provided in aninterlayer insulating film IL3 provided on the interlayer insulatingfilm IL2. A contact plug CP2 (a third layer contact plug) is provided toreach the connecting pad PD through the interlayer insulating film IL3and an end of the contact plug CP2 is connected to a bit line BL (asecond metal wiring) provided on the interlayer insulating film IL3.

On the other hand, in a peripheral circuit region, an MOS transistor Q2is provided on the silicon substrate 1 and the interlayer insulatingfilm IL1 is provided to cover the MOS transistor Q2. The contact plugCP0 penetrating the interlayer insulating film IL1 is provided to reacha diffusion layer 31 to be a source or a drain layer of the MOStransistor Q2.

The MOS transistor Q2 includes a gate insulating film 41 providedselectively on an active region defined by the device isolating film 2,a gate electrode 51 provided on the gate insulating film 41, and thediffusion layer 31 which is provided selectively in the surface of thesilicon substrate 1 on the outside of both side surfaces in a directionof a gate length of the gate electrode 51 and serves as a source ordrain layer. The gate electrode 51 is covered with a silicide layer SS.The side surfaces of the gate insulating film 41 and the gate electrode51 are covered with a sidewall insulating film, which is not shown.

The interlayer insulating film IL2 is provided on the interlayinsulating film IL1 and the plurality of contact plugs CP0 have endsconnected to one of the ends of the contact plug CP1 penetrating theinterlayer insulating film IL2, and the other end of the contact plugCP1 is connected to the first metal wiring M1 provided on the interlayerinsulating film IL2.

The first metal wiring M1 is provided in the interlayer insulating filmIL3 disposed on the interlayer insulating film IL2. The contact plug CP2is provided to reach the metal wiring M1 through the interlayerinsulating film IL3 and the end of the contact plug CP2 is connected tothe second metal wiring M2 provided on the interlayer insulating filmIL3.

With the structure described above, a region surrounded in a broken lineof FIG. 1, that is, a region including a single MOS transistor Q1 and aphase change element PE1 conducted by turning ON the MOS transistor Q1constitutes a memory cell MC1 corresponding to one bit. Two memory cellsMCs which are close to each other are constituted to share a singlesource line and a double plug (a stacked plug) having the contact plugsCP0 and CP1 linked thereto.

<B. Effect>

By employing the memory cell structure of an RUML (Resistor UnderMetal-Line) type in which the phase change element PE1 is disposed belowthe first metal wiring M1 (the source line SL and the connecting padPD), thus, it is possible to reduce the thickness of the interlayerinsulating film between the first metal wiring and the second metalwiring. Accordingly, a line capacity can be prevented from beingdecreased. Moreover, the source line SL and the diffusion layer 3 areconnected to each other through the double plug constituted by thecontact plugs CP0 and CP1. Therefore, also in a case in which a distancebetween the first metal wiring M1 and the silicon substrate 1 isincreased, an aspect ratio of the individual plug is not increased.Consequently, there are not required a process technique and a processdevice which correspond to a high aspect ratio, and an increase in acost can also be suppressed.

Since the interlayer insulating film IL1 provided under the first metalwiring M1 covers the MOS transistor Q1, moreover, it is to be thickenedmore greatly than at least a height of the gate electrode 5 (a wordline). In a case in which it is necessary to cause a current having ahigh current density to flow to the phase change element PE1 withoutincreasing an operating current, however, a diameter of the contact plugCP0 is to be reduced so that there are generated a process technique anda process device which correspond to a high aspect ratio.

In the phase change element PE1, however, a main surface on an oppositeside to a main surface of the phase change film 20 on which the upperelectrode 21 is provided is covered with the thin insulating film 19.Therefore, the thin insulating film 19 serves as a thermal resistor andcan suppress a flow, to the contact plug CP0, of heat generated in theGST in the vicinity of a connecting region to the contact plug CP0.Accordingly, a thermal efficiency can be enhanced considerably.Therefore, even if the contact plug CP0 has a large diameter and a lowcurrent density (an operating current is not increased), it is possibleto cause a phase change over the phase change film 20.

In the semiconductor device 100, accordingly, the diameter of thecontact plug CP0 for connecting the phase change element PE1 to thesilicon substrate 1 can be set to be equal to that of the contact plugCP0 used for connecting the source line SL to the diffusion layer 3, andthere are not required a process technique and a process device whichcorrespond to a high aspect ratio.

The thin insulating film 19 functions as a resistor having a thicknessof 0.5 nm to 5 nm and causing a transmission current (for example, atunnel current or a Poole-Frenkel current) to dominantly flow with thethickness, and having a resistance value of approximately 30 kΩ forcausing a current of approximately 100 μA to 1 mA to flow to the phasechange film 20.

For a material of the thin insulating film 19, it is desirable to use amaterial having a high adhesion to chalcogenide and a lower heatconductivity than that of a contact plug (for example, tungsten), forexample, a Ta (tantalum) oxide film. Japanese Patent ApplicationLaid-Open No. 2006-352082 has disclosed a structure in which a thininsulating film is used for a phase change element.

As shown in FIG. 1, moreover, at least layer structures provided underthe second metal wiring M2 can be set to be the same in the memory cellregion and the peripheral circuit region. Therefore, it is possible tosimplify a manufacturing process. It is not necessary to change a designof the logic circuit corresponding to the structure of the memory cell.In an embedded chip, therefore, it is possible to prevent the cost frombeing increased.

As described above, in the semiconductor device 100 in which the phasechange memory and the logic circuit are provided on the common siliconsubstrate, the cost is not increased and the operating current can alsobe prevented from being increased also in the structure in which thephase change element is provided below the lowermost layer wiring.

With reference to FIG. 2, next, description will be given to furthereffects obtained by connecting the source line SL to the diffusion layer3 through the double plug constituted by the contact plugs CP0 and CP1.

FIG. 2 shows an example in which the source line SL and the diffusionlayer 3 are connected with a structure in which a connecting pad CPD isprovided between the contact plugs CP0 and CP1. In FIG. 2, the samestructures as those in the semiconductor device 100 shown in FIG. 1 havethe same reference numerals and repetitive description will not begiven.

As shown in FIG. 2, the contact plug CP0 reaching the diffusion layer 3serving as the source layer of the MOS transistor Q1 has an endconnected to the lower surface of the connecting pad CPD provided on theinterlayer insulating film IL1, and one of ends of the contact plug CP1penetrating the interlayer insulating film IL2 is connected to the uppersurface of the connecting pad CPD. The other end of the contact plug CP1is connected to the source line SL provided on the interlayer insulatingfilm IL2.

With the structure, a region surrounded in a broken line in FIG. 2, thatis, a region including the single MOS transistor Q1 and the phase changeelement PE1 conducted by turning ON the MOS transistor Q1 constitutes amemory cell MC2 corresponding to one bit.

In an ordinary semiconductor technique, in a case in which an uppercontact plug is connected to a lower contact plug, a connecting padconstituted by a metal wiring layer is provided therebetween. This is ameasure for causing a positional shift of the upper and lower contactplugs to have a margin and suppressing a fluctuation in a contactresistance even if the positional shift is generated.

It is hard to create a rectangular or square pattern such as theconnecting pad in a very small dimension differently from a stripepattern. As illustrated in FIG. 2, consequently, the connecting pad CPDis considerably larger than the diameters of the contact plugs CP1 andCP0 so that a cell size (a dimension in a parallel direction with asubstrate plane) is increased. In a memory separate chip, it is possibleto use a special process and a layout rule for fabricating theconnecting pad CPD to be small. In a logic chip or a memory embeddedlogic chip, however, it is necessary to correspond to various circuitlayouts. For this reason, the use is impossible.

Therefore, there is employed a stacked plug system for directlyconnecting the upper and lower plugs without using a connecting pad.Since the connecting pad for linking the plugs is not required, anincrease in a cell size can be suppressed correspondingly.

With the structure shown in FIG. 2, moreover, patterns having differentfilm structures, that is, the connecting pad CPD and the phase changeelement PE1 are provided in the same layers. Therefore, a complicatedprocess is required in the same manner as in patent document 2. However,the problem is not caused when the connecting pad CPD does not need tobe fabricated.

With reference to FIGS. 3 and 4, next, description will be given to ascheme of the inventors in the employment of the stacked plug.

As shown in FIG. 1, in the contact plugs CP0 and CP1 for connecting thesource line SL to the diffusion layer 3, the diameter of the contactplug CP1 is set to be larger than that of the contact plug CP0 on atleast the ends where the contact plugs CP1 and CP2 are connected to eachother. By thus carrying out the setting, it is possible to suppress achange in a contact area, and furthermore, a contact resistance also ina case in which a shaft of the plug is shifted.

FIG. 3 shows a change in a contact state which is caused by an axialshift in a case in which the diameter of the contact plug CP1 is set tobe larger than that of the contact plug CP0.

(a) Portion of FIG. 3 shows a state in which a central axis AX1 of thecontact plug CP1 and a central axis AX0 of the contact plug CP0 aresuperposed on each other without an axial shift. In a plan view showingrespective end faces superposed on each other, the end face of thecontact plug CP0 is included in that of the contact plug CP1. In thisstate, the contact areas of both of the plugs are not changed.

Moreover, (b) portion of FIG. 3 shows a state in which the central axisAX1 of the contact plug CP1 and the central axis AX0 of the contact plugCP0 are superposed on each other with a slight shift. In a plan viewshowing the respective end faces which are superposed on each other, theend face of the contact plug CP0 is included in that of the contact plugCP1 with difficulty. In this state, the contact areas of both of theplugs are not changed.

On the other hand, (c) portion of FIG. 3 shows a state in which thecentral axis AX1 of the contact plug CP1 and the central axis AX0 of thecontact plug CP0 are superposed on each other with a considerable shift.In a plan view showing the respective end faces which are superposed oneach other, the end face of the contact plug CP0 is slightly protrudedfrom that of the contact plug CP1. Also in this state, the contact areasof both of the plugs are only changed slightly.

For comparison, FIG. 4 shows a change in a contact state which is causedby an axial shift in a case in which the diameter of the contact plugCP1 is set to be equal to that of the contact plug CP0 at the ends wherethe contact plugs CP1 and CP2 are connected to each other.

(a) Portion of FIG. 4 shows a state in which the central axis AX1 of thecontact plug CP1 and the central axis AX0 of the contact plug CP0 aresuperposed on each other without an axial shift. In a plan view showingrespective end faces superposed on each other, the end face of thecontact plug CP0 is perfectly superposed on that of the contact plugCP1. In this state, the contact areas of both of the plugs are notchanged.

Moreover, (b) portion of FIG. 4 shows a state in which the central axisAX1 of the contact plug CP1 and the central axis AX0 of the contact plugCP0 are superposed on each other with a slight shift. In a plan viewshowing the respective end faces which are superposed on each other, theend face of the contact plug CP0 is shifted from that of the contactplug CP1 by an axial shift. Thus, the central axis is slightly shiftedso that the contact areas of both of the plugs are changed.

(c) Portion of FIG. 4 shows a state in which the central axis AX1 of thecontact plug CP1 and the central axis AX0 of the contact plug CP0 aresuperposed on each other with a considerable shift. In a plan viewshowing the respective end faces which are superposed on each other, theend face of the contact plug CP0 is shifted from that of the contactplug CP1 by an axial shift. When the diameter of the contact plug CP1 isset to be equal to that of the contact plug CP0, thus, the contact areasof the both of the plugs are changed with a slight shift. The contactarea is decreased with the axial shift of the upper and lower shifts.For this reason, there is a problem in that a variation is generated onthe contact resistance due to a shift of the superposition and a circuitoperation margin is decreased.

As described above, the diameter of the contact plug CP1 is set to belarge on at least the ends where the contact plugs CP1 and CP2 areconnected to each other. Consequently, it is possible to absorb theshift of the superposition and to suppress a change in the contact area,and furthermore, a change in the contact resistance, thereby ensuring astable operation of the circuit.

The diameter of the contact plug CP1 positioned on the upper side is setto be large with such an intent as to be matched with a minimumdimension because the minimum dimension is generally increased tobalance with a substrate flatness toward an upper layer in asemiconductor process. Moreover, a greater superposition shift can beabsorbed when a diameter ratio is higher. However, a mask layout is notdense. For this reason, a ratio of the diameters of the upper and lowercontact plugs is set to balance with a degree of integration of the masklayout. By setting CP1/CP0 approximately 1.1 to 1.5, however, it ispossible to obtain a proper size.

In both of the contact plugs CP1 and CP0, furthermore, the diameters inthe memory cell region and the peripheral circuit region are set to beequal to each other. Consequently, it is possible to minimize the numberof masks which is necessary for forming the contact plug. The number ofthe masks is directly linked to an increase/decrease in a manufacturingcost. Therefore, the setting is effective for reducing the manufacturingcost.

<C. Variant 1>

In the semiconductor device 100 described with reference to FIG. 1, thecontact plug CP1 provided in contact with the upper electrode 21 of thephase change element PE1 is disposed above the contact plug CP0 providedin contact with the thin insulating film 19. However, it is alsopossible to employ a structure of a semiconductor device 100A shown inFIG. 5 in consideration of an enhancement in a manufacturing yield and areliability of a memory cell.

More specifically, in the semiconductor device 100A shown in FIG. 5, acontact plug CP1 provided in contact with an upper electrode 21 of aphase change element PE1 is disposed in a position shifted from above acontact plug CP0 provided in contact with a thin insulating film 19. Forthis reason, a dimension in a planar direction of the phase changeelement PE1 is set to be larger than that of the semiconductor device100. The same structures as those in the semiconductor device 100 shownin FIG. 1 have the same reference numerals and repetitive descriptionwill not be given.

In the formation of the contact plug CP0, a contact hole to reach adiffusion layer 3 through an interlayer insulating film IL1 is formedand an internal surface of the contact hole is then covered with a TiNfilm to form a barrier metal, for example, and a tungsten film isthereafter filled therein, for example. Then, the tungsten film and theTiN film which are present on the interlayer insulating film IL1 arepolished and removed through CMP (Chemical Mechanical Polishing) tofinish the end face of the contact plug CP0 flatly. However, there is apossibility that an upper surface of a plug metal might be slightlyhigher or lower than a surface of a surrounding insulating film due to avariation in polishing to form recesses and projections.

When the thin insulating film 19, a phase change film 20 and the upperelectrode 21 are formed in that state, they reflect the recesses andprojections of the end face of the contact plug CP0 onto surfacesthereof. In a case in which the phase change film 20 and the upperelectrode 21 are formed by sputtering, particularly, a step of asubstrate is emphasized.

When the contact plug CP1 comes in contact with the recess portion ofthe surface of the upper electrode 21 thus formed, there is apossibility that a contact defect or a reduction in a reliability mightbe caused depending on a contact position. Moreover, in some cases inwhich the thin insulating film 19 is formed on the recesses andprojections of the end face of the contact plug CP0, a drawback iscaused over the function of a resistor.

On the other hand, in the semiconductor device 100A shown in FIG. 5, thecontact plug CP1 is provided in a shifted position from above thecontact plug CP0. Therefore, it is possible to prevent the contact plugCP1 from coming in contact with the recess portion of the surface of theupper electrode 21, thereby enhancing the manufacturing yield andreliability of the memory cell.

<D. Variant 2>

In the semiconductor device 100 described with reference to FIG. 1, thecontact plug CP1 provided in contact with the upper electrode 21 of thephase change element PE1 has a slight difference in a depth from thecontact plug CP1 connected to the contact plug CP0 reaching thediffusion layer 3 serving as a source layer of an MOS transistor Q1.

In a case in which contact plugs having different depths from each otherare formed, it is possible to optimize conditions for dry etchingrespectively by separating masks to form openings individually.Therefore, a process can be simplified. However, there is a problem inthat the number of the masks is increased to increase a cost. Asemiconductor device 100B shown in FIG. 6 has a structure for solvingthe problems.

More specifically, in the semiconductor device 100B shown in FIG. 6, anetching stopper film 23 constituted by an insulating film formed by adifferent material from an interlayer insulating film IL2 is provided tocover a phase change element PE1 and an interlayer insulating film IL1including an end face of the contact plug CP0 which reaches thediffusion layer 3. In a case in which a silicon oxide film is used forthe interlayer insulating film IL2, for example, a silicon nitride filmis used for the etching stopper film 23. In addition, a hard mask 22 tobe used for patterning the phase change element PE1 is left over theupper electrode 21 of the phase change element PE1. Moreover, thematerial of the hard mask 22 is set to be the same as that of theetching stopper film 23. The same structures as those of thesemiconductor device 100 shown in FIG. 1 have the same referencenumerals and repetitive description will not be given.

Also in a case in which the contact plug CP1 provided in contact withthe upper electrode 21 of the phase change element PE1 has a differencein a depth from the contact plug CP1 connected to the contact plug CP0,the etching stopper film 23 is provided so that the progress of theetching is stopped at the etching stopper film 23 when a contact holepenetrating the interlayer insulating film IL2 is formed. Therefore,even if the contact hole has a difference in depth, it is possible tocarry out opening etching by the same mask.

After the opening etching is stopped at the etching stopper film 23, theetching condition is switched into etching of the silicon nitride film.By this procedure, it is possible to form contact holes having differentdepths through the same mask.

A silicon oxide film is generally used for the material of theinterlayer insulating film, and a material which can easily take anetching selection ratio thereto and can easily be treated in a siliconprocess is a silicon nitride film. Therefore, a combination of thesilicon oxide film and the silicon nitride film is suitable for thepurpose.

Next, description will be given to the reason why the hard mask 22 isprovided.

Depending on the material of the phase change film 20, it is impossibleto use a resist material as a mask in the etching in some cases. Morespecifically, a product obtained by the dry etching reacts to the resistmaterial to be an organic material and it is hard to remove a resistafter the end of the etching in some cases. In those cases, the problemis not caused by using the hard mask 22 constituted by an inorganicmaterial.

However, the hard mask 22 cannot be removed by oxygen plasma ashing andthe like. Therefore, the hard mask 22 is left on the phase changeelement PE1 also after the dry etching. Differently from the resistmaterial, however, the hard mask 22 is a thermally stable material.Consequently, the problem is not caused in a subsequent manufacturingprocess, and the hard mask 22 can be used on assumption that it is left.

A selection of the material of the hard mask 22 is to be noted. When thematerial of the hard mask 22 is different from that of the etchingstopper film 23, there is a possibility that the hard mask 22 coveringthe upper surface of the upper electrode 21 cannot be opened and aconduction to the contact plug CP1 cannot be carried out even if theetching stopper film 23 is opened. By setting the materials of the hardmask 22 and the etching stopper film 23 to be identical to each other,therefore, it is possible to etch the hard mask 22 at the step ofopening etching the etching stopper film 23, thereby carrying out theconduction reliably.

As shown in FIG. 6, the hard mask 22 and the etching stopper film 23 areprovided in an overlap with each other over the upper electrode 21 ofthe phase change element PE1, while only the etching stopper film 23 ispresent on the end face of the contact plug CP0 reaching the diffusionlayer 3. Therefore, a total thickness of the silicon nitride film isvaried. However, the hard mask 22 and the etching stopper film 23 arethinly constituted in thicknesses of 60 to 80 nm, respectively. Even iftwo films are provided in an overlap with each other or one film isprovided, there is no problem in respect of the dry etching.

Referring to the etching stopper film 23 provided on the interlayerinsulating film IL1, moreover, an etching selection ratio is increasedbecause the interlayer insulating film IL1 is constituted by the siliconoxide film. Even if the etching is continuously carried out also afterthe etching stopper film 23 is removed, the interlayer insulating filmIL1 is not influenced. For this reason, a difference in thickness doesnot matter.

<E. Manufacturing Method>

Next, a method of manufacturing the semiconductor device 100B shown inFIG. 6 will be described with reference to FIGS. 7 to 18 which aresectional views showing manufacturing steps in order.

First of all, at a step shown in FIG. 7, a silicon substrate 1 isprepared and an isolation insulating film 2 is selectively formed by asilicon oxide film in a surface thereof, for example, to define anactive region.

Subsequently, a gate insulating film 4, a polysilicon gate electrode 5and a sidewall insulating film (not shown) are formed on the activeregion by a conventional method, and the gate electrode 5 and thesidewall insulating film are used as masks to implant an impurity ioninto the silicon substrate 1. Consequently, a diffusion layer 3 tofunction as a source or drain layer is formed to obtain an MOStransistor Q1. A profile of the diffusion layer 3 is adjusted tocorrespond to an MOSFET operation in a very small dimension. A structureof the MOS transistor Q1 is not restricted but can preferably supply acurrent which is enough for causing a phase change through a phasechange element PE1.

After the MOS transistor Q1 is formed, a cobalt layer is provided overthe whole surface of the silicon substrate 1, for example, and issilicided through an execution of a heat treatment. Then, an unreactedcobalt layer is removed so that a silicide layer SS (CoSi₂) is formed onthe diffusion layer 3 and the gate electrode 5.

As a step shown in FIG. 8, subsequently, a silicon oxide film isdeposited by a CVD (Chemical Vapor Deposition) method, for example, overthe whole surface of the silicon substrate 1 to cover the MOS transistorQ1, and is flattened by CMP so that an interlayer insulating film IL1 isobtained. The interlayer insulating film IL1 has a thickness ofapproximately 500 nm.

Thereafter, a contact hole to reach the silicide layer SS on thediffusion layer 3 through the interlayer insulating film IL1 is formedby using a conventional photolithographic and dry etching technique(referred to as a photoetching technique). Next, a TiN film is providedinto the contact hole by the CVD method to form a barrier metal BM0, andfurthermore, tungsten is filled in by the CVD method to form a tungstenplug W0. Then, the tungsten film and the TiN film which are present onthe interlayer insulating film IL1 are polished and removed by the CMPso that a contact plug CP0 having a diameter of approximately 160 nm isobtained.

At a step shown in FIG. 9, next, a TaO (tantalum oxide) thin film 190which has a thickness of approximately 2 nm and is changed into a thininsulating film 19 for reducing a rewriting current of the phase changeelement PE1 is deposited by a sputtering method. Subsequently, a GSTfilm 200 and a W film 210 which have thicknesses of approximately 50 nmand are changed into a phase change film 20 and an upper electrode 21respectively are deposited by the sputtering method.

The thin insulating film 19 is not restricted to TaO but is preferablyformed by a material having a higher adhesion to the GST film than aninterlayer insulating film material and a lower thermal conductivitythan a plug material (W). For example, the same effects as those of TaOcan be produced by a Ti (titanium) oxide film, a Zr (zirconium) oxidefilm, an Hf (hafnium) oxide film, an Nb (niobium) oxide film, a Cr(chromium) oxide film, an Mo (molybdenum) oxide film, a W (tungsten)oxide film, an Al (aluminum) oxide film and the like.

Although the description has been given to the example in which the GST(GeSbTe) is used as the phase change film, moreover, this is notrestricted and it is also possible to use a chalcogenide materialcontaining at least two elements selected from Ge, Sb and Te, an alloywith another element such as In or Ga, or GST having nitrogen or oxygenadded thereto.

Thereafter, a silicon nitride film (SiNx) which has a thickness ofapproximately 200 nm and is changed into a hard mask material 220 isdeposited on the W film 210 by the CVD method, and a resist mask RM1 ispatterned thereon by the photolithographic technique. The resist maskRM1 covers a corresponding portion to a region in which the phase changeelement PE1 is formed (a region including an upper part of the contactplug CP0 reaching the diffusion layer 3 serving as the drain layer ofthe MOS transistor Q1), and the other portions are subjected topatterning to be opening portions.

Subsequently, the resist mask RM1 is used to carry out the patterningover the silicon nitride film 220 by dry etching. As shown in FIG. 10,consequently, the silicon nitride film is left in the correspondingportion to the region in which the phase change element PE1 is formed toobtain a hard mask 22. The resist mask RM1 is removed through oxygenashing.

At a step shown in FIG. 11, next, the silicon nitride film 220 is usedas a hard mask to sequentially carry out the dry etching over the W film210, the GST film 200 and the TaO film 190 so that the phase changeelement PE1 constituted by the thin insulating film 19, the phase changefilm 20 and the upper electrode 21 is obtained. The hard mask 22 is alsoetched by the dry etching. Therefore, the hard mask 22 is left on theupper electrode 21 with the thickness decreased to be approximately 80nm when the patterning is completed.

At a step shown in FIG. 12, then, a silicon nitride film (SiNx) having athickness of approximately 60 nm is deposited by the CVD method over thewhole surface of the silicon substrate 1 including the phase changeelement PE1 on which the hard mask 22 is left, and is set to be theetching stopper film 23. Subsequently, the silicon oxide film isdeposited by the CVD method over the whole surface of the interlayerinsulating film IL1 and is flattened by the CMP so that an interlayerinsulating film IL2 is obtained. The interlayer insulating film IL2 hasa thickness of approximately 300 nm.

At a step shown in FIG. 13, thereafter, a resist mask RM2 is patternedon the interlayer insulating film IL2 by the photolithographictechnique. The resist mask RM2 is patterned in such a manner that acorresponding portion to a region in which a contact plug CP1 is formed(an upper part of the contact plug CP0 reaching the diffusion region 3serving as the source layer of the MOS transistor Q1 and an upper partof the hard mask 22 provided on the phase change element PE1) is anopening portion.

At a step shown in FIG. 14, next, the resist mask RM2 is used to form aplurality of contact holes CH1 penetrating the interlayer insulatingfilm IL2 by the dry etching. In the dry etching, the etching conditionis adjusted in such a manner that an etching speed is high in thesilicon oxide film and is low in the silicon nitride film. In all of thecontact holes CH1, the etching is stopped at the etching stopper film23.

At a step shown in FIG. 15, subsequently, the etching condition ischanged in such a manner that the etching speed is increased in thesilicon nitride film, and the dry etching is carried out again.Consequently, the etching stopper film 23 in the bottom part of thecontact hole CH1 is removed. In the contact hole CH1 formed on thecontact plug CP0, the end face of the contact plug CP0 is exposed andthe hard mask 22 is also removed in the contact hole CH1 formed on thephase change element PE1 so that the surface of the upper electrode 21is exposed.

At a step shown in FIG. 16, then, the resist mask RM2 is removed byoxygen ashing.

At a step shown in FIG. 17, thereafter, a TiN film is provided in thecontact hole CH1 by the sputtering method to form a barrier metal BM1,and furthermore, tungsten is filled in by the CVD method to form atungsten plug W1. The TiN film is formed by the sputtering methodbecause the GST film might be damaged thermally. Moreover, the TiN filmmay be formed by a low temperature CVD method which does not exceed 600°C. Subsequently, the tungsten film and the TiN film which are present onthe interlayer insulating film IL2 are polished and removed by the CMPso that the contact plug CP1 having a diameter of approximately 200 nmis obtained. In this case, a ratio of the diameters of the contact plugsCP0 and CP1 is 200 nm/160 nm=1.25.

Subsequently, it is sufficient that a multilayer wiring layer is formedby using an ordinary multilayer wiring forming process. For example, asshown in FIG. 18, an aluminum layer is formed on the interlayerinsulating film IL2 by the sputtering method and is then subjected topatterning so that a source line SL and a connecting pad PD are formed.Thereafter, a silicon oxide film is deposited over the whole surface ofthe interlayer insulating film IL2 by the CVD method and is flattened bythe CMP so that an interlayer insulating film IL3 is obtained.

A contact hole reaching the connecting pad PD penetrating the interlayerinsulating film IL3 is formed by the photoetching technique and a TiNfilm is provided in the contact hole by the sputtering method to form abarrier metal BM2, and furthermore, tungsten is filled in by the CVDmethod to form a tungsten plug W2. The TiN film is formed by thesputtering method because the GST film might be damaged thermally.Moreover, the TiN film may be formed by the low temperature CVD methodwhich does not exceed 600° C. Thereafter, the tungsten film and the TiNfilm which are present on the interlayer insulating film IL3 arepolished and removed by the CMP so that a contact plug CP2 having adiameter of approximately 200 nm and a depth of approximately 300 nm isobtained. Furthermore, an aluminum layer is formed on the interlayerinsulating film IL3 by the sputtering method, for example, and a bitline BL is then formed by the patterning so that the semiconductordevice 100B shown in FIG. 6 is obtained.

The phase change memory can also be applied to an Al wiring and a Cuwiring. In a case in which the multilayer wiring layer and the phasechange element are formed separately as in the present invention,particularly, an existing structure can be exactly applied even if themultilayer wiring layer is formed of Cu or Al, and a high compatibilitycan be obtained.

FIG. 19 shows an example in which a Cu wiring technique in a 130 nmgeneration is applied.

As shown in FIG. 19, an interlayer insulating film IL3 is deposited onan interlayer insulating film IL2 and a wiring trench for forming awiring layer is provided, and the wiring trench is then filled with acopper layer through plating by single damacine. Consequently, a sourceline SL and a connecting pad PD are formed by a copper wiring.Thereafter, a silicon oxide film is deposited over the whole surface ofthe interlayer insulating film IL3 by the CVD method and is flattened bythe CMP so that an interlayer insulating film IL4 is obtained.

Next, a contact hole reaching the connecting pad PD through theinterlayer insulating film IL4 is formed and a wiring trench for forminga wiring layer is further provided, and the contact hole and the wringtrench are then filled with a copper layer through the plating by dualdamacine. Consequently, a contact plug CPX and a bit line BL are formedat the same time. Subsequently, the formation of the interlayerinsulating film and the dual damacine are repeated so that a furtherupper wiring layer is formed.

While the invention has been shown and described in detail, theforegoing description is in all aspects illustrative and notrestrictive. It is therefore understood that numerous modifications andvariations can be devised without departing from the scope of theinvention.

1. A semiconductor device comprising: a field effect transistor providedon a semiconductor substrate; a first interlayer insulating film forcovering said field effect transistor; a second interlayer insulatingfilm for covering said first interlayer insulating film; a phase changeelement having a phase change film capable of carrying out a phasechange into a crystalline state and an amorphous state by a main currentof said field effect transistor; and a multilayer wiring layer providedon said semiconductor substrate, wherein a lowermost layer wiring ofsaid multilayer wiring layer is provided on said second interlayerinsulating film, said first interlayer insulating film has a pluralityof first layer contact plugs which penetrates said first interlayerinsulating film and is provided in contact with first and seconddiffusion layers of said field effect transistor, said second interlayerinsulating film has a plurality of second layer contact plugs whichpenetrates said second interlayer insulating film and is provided incontact with said lowermost layer wiring, and said phase change elementis provided on said first interlayer insulating film and has a lowersurface provided in contact with an end face of a first plug in saidplurality of first layer contact plugs which reaches said firstdiffusion layer, and a second plug in said plurality of first layercontact plugs which reaches said second diffusion layer and a third plugto be one of said plurality of second layer contact plugs are directlyconnected to each other, thereby constituting a stacked plug.
 2. Thesemiconductor device according to claim 1, wherein said phase changeelement has a thin insulating film provided between said phase changefilm and said first interlayer insulating film, and said thin insulatingfilm has a thickness which can cause the main current of said fieldeffect transistor to flow as a transmitting current.
 3. Thesemiconductor device according to claim 2, wherein said thickness ofsaid thin insulating film is 0.5 nm to 5 nm.
 4. The semiconductor deviceaccording to claim 3, wherein said thin insulating film is selected froma Ta oxide film, a Ti oxide film, a Zr oxide film, an Hf oxide film, anNb oxide film, a Cr oxide film, an Mo oxide film, a W oxide film and anAl oxide film.
 5. The semiconductor device according to claim 1, whereina diameter of said third plug is larger than the diameter of said secondplug.
 6. The semiconductor device according to claim 5, wherein a ratioof the diameter of said third plug to the diameter of said second plugis 1.1 to 1.5.
 7. The semiconductor device according to claim 1, furthercomprising: a hard mask provided on an upper surface of said phasechange element and used for patterning said phase change element; and anetching stopper film for covering said first interlayer insulating filmtogether with said phase change element including said hard mask.
 8. Thesemiconductor device according to claim 7, wherein materials of saidetching stopper film and said second interlayer insulating film aredifferent from each other, and materials of said hard mask and saidetching stopper film are identical to each other.
 9. The semiconductordevice according to claim 8, wherein said material of said etchingstopper film is a silicon nitride film and that of said secondinterlayer insulating film is a silicon oxide film.